Related Experiment Video
Updated: Oct 15, 2025

08:41
Ultrasound Velocity Measurement in a Liquid Metal Electrode
Published on: August 5, 2015
11.9K
Voltage-induced penetration effect in liquid metals at room temperature
Frank F Yun1, Zhenwei Yu1, Yahua He1
1Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia.
National Science Review
|October 25, 2021
Summary
Applying voltage allows room-temperature liquid metal to penetrate porous materials. This voltage-induced low surface tension enables liquid metal superwetting, opening new microfluidic possibilities.
Area of Science:
- Materials Science
- Fluid Dynamics
- Electrochemistry
Background:
- Room-temperature liquid metals exhibit unique properties.
- Controlling liquid metal behavior in porous media is challenging.
Purpose of the Study:
- To investigate the voltage-induced penetration of liquid metals into porous materials.
- To elucidate the mechanism behind this phenomenon.
Main Methods:
- Applying voltage to liquid metal in contact with various porous materials (paper, sponges, fabrics, meshes).
- Observing and analyzing the penetration effects.
- Investigating the role of surface tension reduction via voltage-induced oxidation.
Main Results:
- Liquid metal successfully penetrated macro- and microporous materials under applied voltage.
- Penetration was observed in diverse materials like tissue paper, sponges, fabrics, and meshes.
- Voltage significantly reduced liquid metal surface tension, leading to superwetting and penetration.
Conclusions:
- Voltage-induced surface tension reduction is key to liquid metal penetration in porous materials.
- This phenomenon offers novel applications in microfluidics.
- Further exploration of exotic liquid metal fluid states is warranted.
Related Concept Videos
Metal-Semiconductor Junctions
566
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
566
Theory of Metallic Conduction
1.5K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.5K
The Hall Effect
2.9K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.9K
P-N junction
750
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
750
Biasing of Metal-Semiconductor Junctions
363
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
363
Fermi Level Dynamics
380
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
380

