Related Experiment Video
Updated: Oct 15, 2025

Ultrasound Velocity Measurement in a Liquid Metal Electrode
Published on: August 5, 2015
Voltage-induced penetration effect in liquid metals at room temperature
Frank F Yun1, Zhenwei Yu1, Yahua He1
1Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia.
Abstract:
Room-temperature liquid metal is discovered to be capable of penetrating through macro- and microporous materials by applying a voltage. The liquid metal penetration effects are demonstrated in various porous materials such as tissue paper, thick and fine sponges, fabrics, and meshes. The underlying mechanism is that the high surface tension of liquid metal can be significantly reduced to near-zero due to the voltage-induced oxidation of the liquid metal surface in a solution. It is the extremely low surface tension and gravity that cause the liquid metal to superwet the solid surface, leading to the penetration phenomena. These findings offer new opportunities for novel microfluidic applications and could promote further discovery of more exotic fluid states of liquid metals.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
The Hall Effect
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

