Effective Chemical Vapor Deposition and Characterization of N-Doped Graphene for High Electrochemical Performance

Here we reports an effective synthetic method for the preparation of N-graphene upon thermal annealing of prepared graphene oxide in the existence of ammonia. N-doped graphene oxide was analysed using different characterization techniques like X-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The nitrogen atom showed good binding with the graphene sheets, that are analysed by the X-ray photoelectron spectroscopy. The synthesized N-graphene have shown higher thermal stability compared with GO and graphene. The elcerochemnical performance like Cyclic voltammetry as well chronopotentiometry charge-discharge calculations revealed that the N-doped graphene exhibits remarkable behaviour favors a specific capacitance value about 209 F g^-1 at 5 mV s^-1 and 270 F g^-1 for 1 A g^-1 applied current density including outsanding charge-discharge stability about 98% of the initial capacitance subsequent 1000 cycles at 5 A g^-1. The N-content in the graphene material with the optimized reaction parameters potentially improved electrode active material for energy storage applications.