High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

Area of Science:

• Materials Science
• Chemical Engineering
• Semiconductor Manufacturing

Background:

• Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) is a promising intermediate bonding material.
• Current applications are limited by high curing temperatures and unoptimized compressive pressure, causing device damage.
• Optimizing DVS-BCB bonding is crucial for advanced semiconductor and device packaging.

Purpose of the Study:

• To determine optimal compressive pressure conditions for void-free DVS-BCB bonding.
• To investigate the relationship between bonding parameters and material properties.
• To establish a reliable process for high-quality DVS-BCB interconnections.

Main Methods:

• Investigated DVS-BCB bonding under various compressive pressures at 250 °C.
• Utilized near-infrared confocal laser microscopy and Fourier-transform infrared microscopy to assess voids and crosslinking density.
• Evaluated adhesion strength using a universal testing machine.

Main Results:

• Void-free DVS-BCB bonding was achieved at a compressive pressure of 0.6 N/mm² under vacuum (0.03 Torr) and 250 °C for 1 hour.
• High crosslinking density and good adhesion were observed at the optimized compressive pressure.
• The study identified void formation and crosslinking density as key factors in bonding quality.

Conclusions:

• The optimized process using 0.6 N/mm² compressive pressure yields void-free DVS-BCB bonding with high adhesion.
• This optimized process is significant for improving semiconductor and device packaging technologies.
• Further research can explore other parameters to enhance DVS-BCB performance.