Related Experiment Video
Updated: Oct 13, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains
Ji-Hyun Hur1,2
1Department of Electrical Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea.
Abstract:
Multiferroic materials that have more than two ferroicities at the same time have long been regarded as one of the strongest candidates to achieve technological breakthroughs in many kinds of nanodevice applications. Various types of multiferroic materials have been discovered and devised to date; however, related studies have been conducted without identifying a complete winner because each has a decisive disadvantage. The recently discovered multiferroicity in the 2D Cr2Ge2Te6/In2Se3 van der Waals heterostructure represents an important opportunity to create a new turning point in multiferroic research. Through first-principles density functional theory calculations, we studied the preferential characteristics of the spin magnetic moment of 2D Cr2Ge2Te6 induced by the ferroelectric switching of the In2Se3 monolayer in the presence of the strains that inevitably exist in any kind of heterostructure. From the results, we found that the multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure reacts quite sensitively to the strain level, revealing the possibility of manipulating multiferroic properties in the structure.
More Related Videos
09:35Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy
Published on: July 28, 2020
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Ferromagnetism
Three-Dimensional Analysis of Strain
Elastic Strain Energy for Shearing Stresses
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Shearing Strain
Elastic Strain Energy for Normal Stresses
If...