Evidence That Sharp Interfaces Suppress Recombination in Thick Organic Solar Cells
Related Experiment Video
Updated: Oct 13, 2025

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
Published on: January 10, 2017
Obaid Alqahtani1,2, Seyed Mehrdad Hosseini3, Thomas Ferron4
1Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164, United States.
Abstract:
Commercialization and scale-up of organic solar cells (OSCs) using industrial solution printing require maintaining maximum performance at active-layer thicknesses >400 nm─a characteristic still not generally achieved in non-fullerene acceptor OSCs. NT812/PC71BM is a rare system, whose performance increases up to these thicknesses due to highly suppressed charge recombination relative to the classic Langevin model. The suppression in this system, however, uniquely depends on device processing, pointing toward the role of nanomorphology. We investigate the morphological origins of this suppressed recombination by combining results from a suite of X-ray techniques. We are surprised to find that while all investigated devices are composed of pure, similarly aggregated nanodomains, Langevin reduction factors can still be tuned from ∼2 to >1000. This indicates that pure aggregated phases are insufficient for non-Langevin (reduced) recombination. Instead, we find that large well-ordered conduits and, in particular, sharp interfaces between domains appear to help to keep opposite charges separated and percolation pathways clear for enhanced charge collection in thick active layers. To our knowledge, this is the first quantitative study to isolate the donor/acceptor interfacial width correlated with non-Langevin charge recombination. This new structure-property relationship will be key to successful commercialization of printed OSCs at scale.
Related Concept Videos
P-N junction
Conservative Site-specific Recombination and Phase Variation
The recognition sites for Cre recombinase called LoxP...
Sharpless Epoxidation
Crossing Over
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
The Z-Scheme of Electron Transport in Photosynthesis

