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Semiconductor Epitaxy in Superconducting Templates.

Markus F Ritter1, Heinz Schmid1, Marilyne Sousa1

  • 1IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

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|November 18, 2021
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Summary

Researchers developed a new method to integrate semiconductor-superconductor devices on silicon. This technique enables the creation of hybrid devices with sharp interfaces, showing proximity-induced superconductivity in indium arsenide (InAs).

Keywords:
Semiconductor−superconductor hybridsindium arsenide (InAs)semiconductor epitaxytemplate-assisted selective epitaxytitanium nitride (TiN)

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Scalable integration of semiconductor-superconductor devices is crucial for advanced electronics.
  • Current methods face challenges in achieving high-quality interfaces and compatibility with existing architectures.

Purpose of the Study:

  • To demonstrate a novel monolithic integration technique for semiconductor-superconductor devices on silicon.
  • To enable the growth of hybrid devices with precise control over interfaces and alignment.

Main Methods:

  • Monolithic growth of indium arsenide (InAs) nanowires on silicon within lateral cavities.
  • Incorporation of superconducting titanium nitride (TiN) elements.
  • Electrical characterization at low temperatures.

Main Results:

  • Achieved sharp semiconductor-superconductor interfaces between InAs and TiN.
  • Demonstrated successful integration of InAs nanowires on silicon.
  • Observed proximity-induced superconductivity in InAs through a transparent interface.

Conclusions:

  • The developed technique overcomes key challenges in integrating hybrid devices.
  • This approach facilitates the creation of novel superconducting devices compatible with silicon technology.
  • The findings pave the way for practical implementation of semiconductor-superconductor devices.