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Updated: Oct 12, 2025

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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
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Advanced and versatile interferometric technique for the characterization of photonic integrated devices
Optics Express
|November 23, 2021
Summary
We developed a new optical characterization technique for photonic integrated devices. This method precisely measures amplitude and phase responses, aiding in error detection and potentially standardizing device testing.
Area of Science:
- Photonics
- Optical Engineering
- Integrated Optics
Background:
- Advanced optical characterization is crucial for identifying design and fabrication errors in photonic integrated devices.
- Current methods often lack the comprehensive amplitude and phase response analysis needed for complex devices.
Purpose of the Study:
- To introduce a novel technique for full optical amplitude and phase characterization of photonic integrated devices.
- To validate the technique's effectiveness across different material platforms and device types.
Main Methods:
- Utilized optical frequency domain interferometry with a novel 3-way integrated interferometer architecture.
- Enabled single input and single output detection for simplified measurement.
- Derived test structure design rules and performed extensive experimental validation.
Main Results:
- Successfully resolved full optical amplitude and phase response in both frequency and time domains.
- Demonstrated the technique's applicability to silicon nitride and silicon on insulator technologies.
- Validated performance on arrayed waveguide gratings, Mach-Zehnder interferometers, and ring resonators.
Conclusions:
- The proposed technique offers adaptable and complex optical characterization capabilities.
- It provides a robust method for uncovering design and fabrication flaws.
- This approach has the potential to become a standard testing tool for photonic integrated devices.

