Broadband thin-film and metamaterial absorbers using refractory vanadium nitride and their thermal stability

Strong absorption of the full spectrum of sunlight at high temperatures is desired for photothermal devices and thermophotovoltaics. Here, we experimentally demonstrate a thin-film broadband absorber consisting of a vanadium nitride (VN) film and a SiO₂ anti-reflective layer. Owing to the intrinsic high loss of VN, the fabricated absorber exhibits high absorption over 90% in the wide range of 400-1360 nm. To further enhance the near-infrared absorption, we also propose a metamaterial absorber by depositing patterned VN square patches on the thin-film absorber. An average absorption of 90.4% over the range of 400-2500 nm is achieved due to the excitation of broad electric dipole resonance. Both thin-film and metamaterial absorbers are demonstrated to possess excellent incident angle tolerances (up to 60°) and superior thermal stability at 800 ℃. The proposed refractory VN absorbers may be potentially used for solar energy harvesting, thermal emission, and photodetection.