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Updated: Oct 12, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Atomic-scale fatigue mechanism of ferroelectric tunnel junctions
Yihao Yang1, Ming Wu2,3, Xingwen Zheng4
1College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China.
Abstract:
Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memories due to fast read/write speeds and low-power consumptions. Here, we investigate resistance fatigue of FTJs, which is performed on Pt/BaTiO3/Nb:SrTiO3 devices. By direct observations of the 5–unit cell–thick BaTiO3 barrier with high-angle annular dark-field imaging and electron energy loss spectroscopy, oxygen vacancies are found to aggregate at the Pt/BaTiO3 interface during repetitive switching, leading to a ferroelectric dead layer preventing domain nucleation and growth. Severe oxygen deficiency also makes BaTiO3 lattices energetically unfavorable and lastly induces a destruction of local perovskite structure of the barrier. Ferroelectric properties are thus degraded, which reduces barrier contrast between ON and OFF states and smears electroresistance characteristics of Pt/BaTiO3/Nb:SrTiO3 FTJs. These results reveal an atomic-scale fatigue mechanism of ultrathin ferroelectric barriers associated with the aggregation of charged defects, facilitating the design of reliable FTJs and ferroelectric nanoelectronic devices for practical applications.
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