Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure...

Area of Science:

• Materials Science
• Electrical Engineering
• Chemical Sensing

Background:

• Floating gate Fin field-effect transistors (FGFETs) offer potential for sensitive ion detection.
• Existing ion sensors often lack multifunctionality or require complex fabrication.
• Enhancing sensing area and material selectivity are key to improving ion sensor performance.

Purpose of the Study:

• To demonstrate a multifunctional ion-sensitive floating gate Fin field-effect transistor (ISFGFinFET) for simultaneous hydrogen and sodium ion detection.
• To investigate methods for enhancing sensor sensitivity through structural design and material selection.
• To evaluate the performance and scalability of the developed ISFGFinFET sensor.

Main Methods:

• Fabrication of an ISFGFinFET integrating a FGFET with specific sensing films.
• Utilizing glancing angle deposition (GLAD) to create a nanoseaweed structure for increased surface area.
• Employing a calix[4]arene sensing film for sodium ion detection.
• Developing sensor arrays (3x3 pixels) and simulating larger arrays (16x16) with peripheral circuits.

Main Results:

• Achieved high sensitivity for hydrogen ion detection (266 mV/pH) using the nanoseaweed structure.
• Demonstrated significant sensitivity for sodium ion detection (432.7 mV/pNa) with the calix[4]arene film.
• Confirmed the capability of simultaneous detection of multiple ions.
• Showcased functional sensor arrays and simulated large-scale integration.

Conclusions:

• The ISFGFinFET is a promising multifunctional sensor for simultaneous detection of hydrogen and sodium ions.
• The proposed design, incorporating nanostructured surfaces and selective films, significantly enhances ion sensitivity.
• The sensor's performance is competitive with state-of-the-art ion sensors, with potential for scalable applications.