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Updated: Oct 12, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Spin-constrained optoelectronic functionality in two-dimensional ferromagnetic semiconductor heterojunctions
Yilv Guo1, Yehui Zhang, Zhaobo Zhou
1School of Physics, Southeast University, Nanjing 211189, China. siesta@seu.edu.cn jlwang@seu.edu.cn.
Abstract:
Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary and new physics concepts and potential applications. Herein, we propose a new type of spin-constrained optoelectronic device developed using 2D ferromagnetic semiconductor heterostructures (FMSs). It is based on a photoexcited double-band-edge transition model, involved coupling between the interlayer magnetic order and the spin-polarized band structure and can achieve the reversible switch of band alignment via reversal of magnetization. We demonstrate that such a unique magnetic optoelectronic device can be realized with a CrBr3/CrCl3 heterojunction and other 2D FMS heterojunctions that have the same direction as the easy magnetization axis and have a switchable band alignment that allows reconfiguration. This study opens a new application window for 2D vdW heterostructures and enables the possibility for fully vdW-based ultra-compact spintronics devices.
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