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Updated: Oct 12, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Journey of MOSFET from Planar to Gate All Around: A Review
Krutideepa Bhol1, Biswajit Jena2, Umakanta Nanda1
1School of Electronics Engineering, VIT-AP University, Amaravati-522237, AP, India.
Abstract:
With the continuous miniaturization in device dimension to reach the expectation raised by semiconductor users, the shape and size of the MOSFET are changing periodically. The journey started in the year 1960, reached the milestone, and still going on to create history. Due to continuous downscaling, the device dimensions have already reached the critical limit and further miniaturization is a challenge. As a result of which some unwanted effects were raised unknowingly to suppress the device performances while entering into nanoscale. To overcome these kinds of barriers, different device architectures were proposed to keep the journey on. This paper focused on those types of advanced structures in MOSFET, which kept Moore's law alive.
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