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Determination of Crystal Structures01:29

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In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

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Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared.

Catalin Palade1, Ana-Maria Lepadatu1, Adrian Slav1

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Group IV silicon-germanium (SiGe) nanocrystals embedded in hafnium dioxide (HfO2) show high photocurrent efficiency. This SiGe NC/HfO2 matrix extends photoelectric sensitivity into the short-wave infrared due to quantum confinement and strain effects.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Photonics

Background:

  • Group IV nanocrystals (NCs), especially Si-Ge systems, are crucial for silicon photonics.
  • Developing efficient SiGe NCs requires precise control over their structure and surrounding matrix.

Purpose of the Study:

  • To fabricate and characterize Ge-rich SiGe NCs within a nanocrystallized HfO2 matrix for Si photonics.
  • To investigate the structural properties and photoelectric performance of these SiGe NC/HfO2 structures.

Main Methods:

  • Magnetron sputtering deposition followed by rapid thermal annealing at 600 °C.
  • Characterization using X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy.
  • Fabrication of SiGe NCs cladded with thin HfO2 layers to prevent Ge diffusion.

Main Results:

  • Formation of Ge-rich SiGe NCs (3-7 nm diameter) within a nanocrystallized HfO2 matrix.
  • Identification of monoclinic, tetragonal, and orthorhombic phases in the HfO2 matrix and SiGe NCs.
  • High photocurrent efficiency observed over a broad spectral range (600-2000 nm) at low temperatures.

Conclusions:

  • The SiGe NC/HfO2 system exhibits extended photoelectric sensitivity up to 2000 nm, surpassing Ge's limit.
  • Quantum confinement and strain effects at the SiGe NC/HfO2 interface contribute to the enhanced infrared sensitivity.