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Published on: August 15, 2014
ZRO Drift Reduction of MEMS Gyroscopes via Internal and Packaging Stress Release
Pengfei Xu1,2, Zhenyu Wei1,2, Lu Jia1,2
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Abstract:
Zero-rate output (ZRO) drift induces deteriorated micro-electromechanical system (MEMS) gyroscope performances, severely limiting its practical applications. Hence, it is vital to explore an effective method toward ZRO drift reduction. In this work, we conduct an elaborate investigation on the impacts of the internal and packaging stresses on the ZRO drift at the thermal start-up stage and propose a temperature-induced stress release method to reduce the duration and magnitude of ZRO drift. Self-developed high-Q dual-mass tuning fork gyroscopes (TFGs) are adopted to study the correlations between temperature, frequency, and ZRO drift. Furthermore, a rigorous finite element simulation model is built based on the actual device and packaging structure, revealing the temperature and stresses distribution inside TFGs. Meanwhile, the relationship between temperature and stresses are deeply explored. Moreover, we introduce a temperature-induced stress release process to generate thermal stresses and reduce the temperature-related device sensitivity. By this way, the ZRO drift duration is drastically reduced from ~2000 s to ~890 s, and the drift magnitude decreases from ~0.4 °/s to ~0.23 °/s. The optimized device achieves a small bias instability (BI) of 7.903 °/h and a low angle random walk (ARW) of 0.792 °/√ h, and its long-term bias performance is significantly improved.
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