Low-Energy Pulsed Ion Beam Technology with Ultra-High Material Removal Resolution and Widely Adjustable Removal
Guangqi Zhou1,2,3, Ye Tian1,2,3,4, Feng Shi1,2,3
1College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Abstract:
High-precision optical component manufacturing by ion beam machining tools with ultra-high material removal resolution and dynamically adjustable removal efficiency is important in various industries. In this paper, we propose a low-energy pulsed ion beam (LPIB) technology that can obtain a single pulse with high-resolution material removal by adjusting the pulse frequency and duty cycle, and enable the dynamic adjustment of the removal efficiency. The pulse frequency is 1-100 Hz, and the duty cycle is 0-100%. For monocrystalline silicon, the pulse frequency and duty cycle are set to 100 Hz and 1%, respectively; thus, the single-shot pulse depth removal resolution of material is 6.7 × 10-4 nm, which means every 21 pulses can remove one silicon atom layer. Compared with IBF, where the removal resolution of the maximum depth is about 0.01 nm, the controllable resolution is one to two orders of magnitude higher. There is a linear relationship between the removal efficiency of the pulsed ion beam removal function and the pulse duty ratio. The material removal of a single pulse can be adjusted in real time by adjusting the pulse duty cycle and frequency. Owing to its high resolution and wide adjustable removal efficiency, LPIB has broad application prospects in the field of sub-nano-precision surface modification, quality tuning of inertial resonant devices, and so on. This technology is expected to advance surface processing and ultra-precision manufacturing.
