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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Updated: Oct 12, 2025

Large Scale Energy Efficient Sensor Network Routing Using a Quantum Processor Unit
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EE-ACML: Energy-Efficient Adiabatic CMOS/MTJ Logic for CPA-Resistant IoT Devices.

Zachary Kahleifeh1, Himanshu Thapliyal1,2

  • 1Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506, USA.

Sensors (Basel, Switzerland)
|November 27, 2021
PubMed
Summary

This study introduces Energy Efficient-Adiabatic CMOS/MTJ Logic (EE-ACML) for Internet of Things (IoT) devices, significantly reducing energy consumption and enhancing security against side-channel attacks.

Keywords:
adiabatic clock generatoradiabatic logiccorrelation power analysis attacklow energy IoTmagnetic tunnel junctionside-channel attacks

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Area of Science:

  • Computer Engineering
  • Cybersecurity
  • Materials Science

Background:

  • Internet of Things (IoT) devices face critical energy limitations due to battery dependence.
  • Cryptographic operations in IoT are energy-intensive and susceptible to side-channel hardware attacks.
  • Existing CMOS/MTJ architectures struggle to balance energy efficiency and security.

Purpose of the Study:

  • To propose a novel logic design, Energy Efficient-Adiabatic CMOS/MTJ Logic (EE-ACML), for low-power and secure IoT devices.
  • To combine adiabatic logic and Magnetic Tunnel Junctions (MTJs) to mitigate energy consumption and leakage power.
  • To demonstrate the practical application and energy-saving benefits of EE-ACML in cryptographic implementations.

Main Methods:

  • Developed the Energy Efficient-Adiabatic CMOS/MTJ Logic (EE-ACML) by integrating adiabatic logic principles with MTJ technology.
  • Implemented a one-round PRESENT-80 cryptographic circuit utilizing the proposed EE-ACML and an adiabatic clock generator.
  • Evaluated energy consumption and security against Correlation Power Analysis (CPA) attacks.

Main Results:

  • EE-ACML demonstrated significant reductions in dynamic energy consumption through adiabatic logic and reduced leakage power via MTJs.
  • The EE-ACML-based PRESENT-80 design achieved energy savings of 67.24% at 25 MHz and 86.5% at 100 MHz compared to prior CMOS/MTJ circuits.
  • Cryptographic security was validated, with the secret key remaining undisclosed under CPA attack simulations.

Conclusions:

  • EE-ACML offers a promising solution for developing energy-efficient and secure cryptographic operations in resource-constrained IoT devices.
  • The combination of adiabatic logic and MTJs effectively addresses the dual challenges of power consumption and hardware security vulnerabilities.
  • The proposed EE-ACML logic provides a practical and robust approach for next-generation IoT security.