Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures

Rabia Akan1, Ulrich Vogt1

  • 1KTH Royal Institute of Technology, Department of Applied Physics, Albanova University Center, 106 91 Stockholm, Sweden.

Summary

This study explores metal-assisted chemical etching (MACE) for creating high-aspect ratio silicon nanostructures. An optimized MACE process using isopropanol achieved stable, vertical silicon structures with an aspect ratio over 100:1.

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