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Stable Field Emission from Vertically Oriented SiC Nanoarrays.

Jianfeng Xiao^1,2, Jiuzhou Zhao², Guanjiang Liu²

¹Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China.

Nanomaterials (Basel, Switzerland)

|November 27, 2021

Summary

This summary is machine-generated.

Fabricating silicon carbide (SiC) nanoarrays for field emitters is now simpler using reactive ion etching. This method yields uniform, high-performance SiC nanoarrays suitable for vacuum electronics.

Keywords:

field emission nanoarrays one-dimensional nanomaterials silicon carbide

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Silicon carbide (SiC) nanostructures are excellent field emitters due to superior material properties.
Fabricating SiC nanotips arrays is challenging due to SiC's chemical inertness.

Purpose of the Study:

To develop a simple and scalable method for fabricating well-aligned SiC nanoarrays.
To evaluate the field emission performance of the fabricated SiC nanoarrays.

Main Methods:

Utilized industry-familiar reactive ion etching on 4H-SiC wafers.
Characterized the morphology, uniformity, and field emission properties of the resulting SiC nanoarrays.

Main Results:

Achieved vertically oriented SiC nanoarrays with high packing density (>10^7 mm^-2) and aspect ratios (~35).
Demonstrated high geometry uniformity with <5% length and <10% diameter variation.
Observed low turn-on fields (4.3 V μm^-1) and a high field-enhancement factor (~1260).
Exhibited excellent current emission stability over 8 hours (1.9 ± 1% fluctuation).

Conclusions:

The reactive ion etching method provides a viable route for scalable production of high-performance SiC field emitters.
The fabricated SiC nanoarrays show significant potential for various vacuum electronics applications.