Related Experiment Video
Updated: Oct 11, 2025

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation
Published on: February 25, 2017
Purcell Enhancement of a Cavity-Coupled Emitter in Hexagonal Boron Nitride
Johannes E Fröch1, Chi Li1, Yongliang Chen1
1School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
Abstract:
Integration of solid-state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic-based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for a quantum emitter. In this work, the resonant tuning of a monolithic cavity integrated hBN quantum emitter is demonstrated through gas condensation at cryogenic temperature. In resonance, an emission enhancement and lifetime reduction are observed, with an estimate for the Purcell factor of ≈15.
More Related Videos
Related Concept Videos
Working Principle of BJT
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
BJT Amplifiers
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Configurations of BJT
The common base configuration is noted for its high voltage gain, positioning it as an ideal choice for single-stage amplifier circuits, such as microphone pre-amplifiers. A notable...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

