Related Experiment Video
Updated: Oct 11, 2025

Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy
Published on: July 28, 2020
Modifying Jahn-Teller distortion by epitaxial stress in LaMnO3films for tunning electron localization
Xin Chen1, Baohua Wang1, Tongxin Ge1
1School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu, 273165, People's Republic of China.
Abstract:
The effect of epitaxial stress on Jahn-Teller (JT) distortion in epitaxial LaMnO3(LMO) films has been investigated. Both2θ-ωscans and reciprocal space maps (RSMs) indicate that LMO samples are subjected to compressive stress. Obvious Laue oscillations can be detected in2θ-ωscans, indicating the high quality of samples. RSMs of symmetry peak (001) and asymmetry peak (-103) imply different epitaxial stress for LMO films deposited on different substrates. Raman spectra measurements reveal that the degree of JT distortion can be well tuned via the epitaxial stress which may further influence on the electron localization in the films. This study might benefit to understanding the correlation between crystalline structure and electrical transport properties of LMO films and related LMO-based superlattices.

