Charge Transfer Properties of Heterostructures Formed by Bi₂ O₂ Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi₂ O₂ Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi₂ O₂ Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂ O₂ Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂ O₂ Se and representative transition metal dichalcogenides (namely, WS₂ /Bi₂ O₂ Se and MoS₂ /Bi₂ O₂ Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂ O₂ Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.