Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

NEP89: universal neuroevolution potential for inorganic and organic materials across 89 elements.

Nature computational science·2026

Same author

K<sup>+</sup>-free mica-assisted epitaxy of Bi-based chalcogenide and oxychalcogenide single-crystals.

Nature communications·2026

Same author

Author Correction: Ultra-coherent meta-emitter tailors arbitrary thermal wavefront.

Nature communications·2026

Same author

Accurate Modeling of Interfacial Thermal Transport in van der Waals Heterostructures via Hybrid Machine Learning and Registry-Dependent Potentials.

Journal of chemical theory and computation·2026

Same author

Ultra-coherent meta-emitter tailors arbitrary thermal wavefront.

Nature communications·2026

Same author

Multifunctional 2H-MoTe<sub>2</sub> Device Enabling Broadband Self-Powered Photodetection and On-Chip Miniaturized Spectrometry.

Small (Weinheim an der Bergstrasse, Germany)·2026

Search research articles

Related Experiment Video

Updated: Oct 11, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Synthesis and Characterization of Metallic Janus MoSH Monolayer.

Xi Wan¹, EnZi Chen², Jie Yao¹

¹Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.

|December 6, 2021

Summary

Researchers synthesized Janus Molybdenum-doped Silicon (MoSH) monolayers using controlled hydrogen plasma. This study details MoSH properties and its potential for mid-infrared Surface Plasmon Resonance (SPR) applications.

Keywords:

Janus KPFM MoS2 MoSH MoSSe plasma

More Related Videos

Author Spotlight: Exploring Self-Assembled MOF-Polymer Composites

Author Spotlight: Exploring Self-Assembled MOF-Polymer Composites

Published on: June 14, 2024

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Related Experiment Videos

Last Updated: Oct 11, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Author Spotlight: Exploring Self-Assembled MOF-Polymer Composites

Author Spotlight: Exploring Self-Assembled MOF-Polymer Composites

Published on: June 14, 2024

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Janus transition-metal dichalcogenides (TMDCs) exhibit unique properties due to asymmetric chalcogen bonding.
Existing synthesis methods for Janus TMDCs often overlook intermediate compounds like Janus Molybdenum-doped Silicon (MoSH).
Understanding MoSH formation is crucial for controlled synthesis and avoiding material degradation.

Purpose of the Study:

To develop a controlled method for synthesizing Janus MoSH monolayers.
To investigate the electronic properties of Janus MoSH.
To explore the potential of Janus MoSH for device applications, particularly in Surface Plasmon Resonance (SPR).

Main Methods:

Controlled hydrogen (H2) plasma treatment for gradual synthesis of Janus MoSH.
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) for material characterization.
Field-effect transistor (FET) device studies, Kelvin probe force microscopy (KPFM), and density functional theory (DFT) calculations for electronic property investigation.

Main Results:

Successful synthesis of Janus MoSH monolayer confirmed by TOF-SIMS.
High intrinsic carrier concentration (∼2 × 10^13 cm^-2) and a Fermi level (∼ -4.11 eV) were determined.
Demonstrated a pathway for fabricating Janus Molybdenum-Sulfur-Selenium (MoSSe) from MoSH.

Conclusions:

A controlled H2 plasma method enables the synthesis of Janus MoSH.
Key electronic parameters of Janus MoSH are identified, significant for device applications.
The metallicity of 2D Janus MoSH suggests potential for SPR in the mid-infrared spectrum.