Variation from Zero to Negative Thermal Quenching of Phosphor with Assistance of Defect States

Proper defect states are demonstrated to be beneficial to overcome thermal quenching of the corresponding phosphors. In this work, a cyan-emitting KGaGeO₄/Bi³⁺ phosphor with abundant defect states is reported, the emission intensity of which exhibits an abnormal thermal quenching performance under excitation with different photon energies. A 100% emission intensity is achieved at 393 K under 325 nm excitation compared with that at room temperature, while significantly enhanced intensities of 207% at 393 K and even 351% at 513 K under 365 nm excitation are recorded. The excellent thermal stability performance is confirmed to be not only related to the direct energy transfer from the defect states but also depended on the efficiency of capturing carriers for the trap centers, which is clarified in this work. In addition, the mechanism of the double tunneling process of carriers from trap centers to luminescence centers and luminescence centers to trap centers is studied. These results are believed to provide new insights into the thermal stability of the corresponding fluorescent materials and could inspire studies to further explore novel fluorescent materials with high thermal stability based on defect state engineering.