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Synthesis and n-Type Semiconducting Properties of Bis(dioxaborin) Compounds Containing a π-Extended 2,2'-Bithiophene
Yohei Kojima1, So Sugiura1, Keiji Suzuki1
1Graduate School of Engineering, Nagoya Institute of Technology Gokiso, Showa-ku, Nagoya, 466-8555, Japan.
Chemistry, an Asian Journal
|December 11, 2021
Summary
New π-conjugated bis(dioxaborin) compounds with olefin spacers show enhanced n-type semiconductor properties for organic field-effect transistors (OFETs). Extended conjugation and reduced Coulomb repulsion improve electron transport and device performance.
Area of Science:
- Organic electronics
- Materials science
- Semiconductor physics
Background:
- Bis(dioxaborin) compounds with π-conjugated systems are explored as n-type semiconductors.
- Organic field-effect transistors (OFETs) require efficient n-type materials for advanced electronic applications.
Purpose of the Study:
- To synthesize novel bis(dioxaborin) compounds with extended π-conjugation using olefin or acetylene spacers.
- To investigate the impact of π-conjugation extension on n-type semiconducting properties and stability.
- To understand the relationship between molecular structure and electron transport mechanisms.
Main Methods:
- Synthesis of new bis(dioxaborin) compounds featuring 2,2'-bithiophene derivatives with olefin/acetylene spacers.
- Spectroscopic analysis (UV-Vis absorption) to determine optical properties.
- Fabrication and characterization of OFET devices.
- Theoretical calculations using Marcus theory for electron transport analysis.
Main Results:
- Compounds with olefin spacers exhibited significant red-shifts in absorption maxima.
- Synthesized compounds demonstrated high electron affinity.
- Olefin spacers effectively reduced on-site Coulomb repulsion during two-electron reduction.
- An OFET device with a layer-by-layer crystal structure showed n-type semiconductor behavior and low threshold voltage.
Conclusions:
- Extended π-conjugation in bis(dioxaborin) compounds, particularly with olefin spacers, enhances n-type semiconducting properties.
- Reduced on-site Coulomb repulsion is crucial for efficient electron transport in these materials.
- The synthesized compounds represent promising candidates for n-type semiconductors in OFETs.
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