High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure

Area of Science:

• Materials Science
• Semiconductor Physics
• Nanotechnology

Background:

• Metal halide perovskites (MHPs) show promise as p-type semiconductors for thin-film transistors (TFTs).
• Existing 2D MHPs suffer from low mobility due to grain boundaries, while 3D MHPs exhibit high, uncontrollable hole density and threshold voltage (Vth).

Purpose of the Study:

• To develop a novel 2D-3D core-shell structure for MHPs to address limitations in TFT applications.
• To improve the performance of p-type MHPs by controlling Vth and enhancing grain-boundary resistance.

Main Methods:

• Fabrication of a 2D-3D core-shell structure using 2D PEA2SnI4 and 3D FASnI3 MHPs.
• Utilized SnF2 additives to facilitate the formation of the core-shell structure.
• Characterization of the MHP thin-film transistors (TFTs) and their performance metrics.

Main Results:

• The 2D/3D core-shell structure effectively isolates the 3D MHP core with a 2D MHP shell.
• Achieved independent control over Vth via the 2D component and significantly improved grain-boundary resistance.
• Demonstrated a high-performance p-type Sn-based MHP TFT with a field-effect mobility of approximately 25 cm²/V·s.
• Integrated the p-type Sn-MHP TFT into a complementary metal oxide semiconductor (CMOS) inverter, achieving a voltage gain of ~200 V/V.

Conclusions:

• The proposed 2D-3D core-shell structure offers a viable strategy for high-performance MHP TFTs.
• This architecture effectively mitigates the drawbacks of both 2D and 3D MHPs.
• The findings pave the way for advanced MHP-based electronic devices.