Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature

The large-area synthesis of high-quality MoS₂ plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS₂ require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS₂ with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS₂ exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm² V^-1 s^-1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS₂ growth process via a geometric model of the MoS₂ flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.