Effect of Al₂O₃ Passive Layer on Stability and Doping of MoS₂ Field-Effect Transistor (FET) Biosensors

Molybdenum disulfide (MoS₂) features a band gap of 1.3 eV (indirect) to 1.9 eV (direct). This tunable band gap renders MoS₂ a suitable conducting channel for field-effect transistors (FETs). In addition, the highly sensitive surface potential in MoS₂ layers allows the feasibility of FET applications in biosensors, where direct immobilization and detection of biological molecules are conducted in wet conditions. In this work, we report, for the first time, the degradation of chemical vapor deposition (CVD) grown MoS₂ FET-based sensors in the presence of phosphate buffer and water, which caused false positive response in detection. We conclude the degradation was originated by physical delamination of MoS₂ thin films from the SiO₂ substrate. The problem was alleviated by coating the sensors with a 30 nm thick aluminum oxide (Al₂O₃) layer using atomic layer deposition technique (ALD). This passive oxide thin film not only acted as a protecting layer against the device degradation but also induced a strong n-doping onto MoS₂, which permitted a facile method of detection in MoS₂ FET-based sensors using a low-power mode chemiresistive I-V measurement at zero gate voltage (V_gate = 0 V). Additionally, the oxide layer provided available sites for facile functionalization with bioreceptors. As immunoreaction plays a key role in clinical diagnosis and environmental analysis, our work presented a promising application using such enhanced Al₂O₃-coated MoS₂ chemiresistive biosensors for detection of HIgG with high sensitivity and selectivity. The biosensor was successfully applied to detect HIgG in artificial urine, a complex matrix containing organics and salts.