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Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications.

Sayed Md Tariful Azam1,2, Abu Saleh Md Bakibillah3, Md Tanvir Hasan2

  • 1Department of Electrical and Computer Engineering, Technische Universität Kaiserslautern, 67653 Kaiserslautern, Germany.

Nanomaterials (Basel, Switzerland)
|December 24, 2021
PubMed
Summary

Investigating dual material gate (DMG) InGaAs p-TFETs, this study found that varying the step gate work function optimizes performance. A high work function difference enhances low power digital applications, while a low difference benefits analog applications.

Keywords:
InGaAsdual material gategate work functionlow power switchingp-TFET

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Area of Science:

  • Semiconductor device physics
  • Materials science

Background:

  • Advanced field-effect transistors (FETs) are crucial for low-power electronics.
  • Dual Material Gate (DMG) technology offers a method to modulate device characteristics.
  • Understanding work function effects is key to optimizing transistor performance.

Purpose of the Study:

  • To theoretically investigate the impact of step gate work function on InGaAs p-type FET (p-TFET) performance.
  • To analyze device parameters for both low-power digital and analog applications.
  • To determine the optimal gate work function difference for specific applications.

Main Methods:

  • Theoretical investigation of InGaAs p-TFET devices with DMG structure.
  • Analysis of device performance based on gate work function difference (ΔϕS-D).
  • Variation of drain-side gate electrode work function while keeping the source-side fixed (Pt, ϕS = 5.65 eV).

Main Results:

  • Device performance is sensitive to the gate work function difference due to altered electric field and carrier distributions.
  • A high gate work function difference (ΔϕS-D = 1.02 eV) yielded a low subthreshold slope (30.89 mV/dec) and off-state current (0.39 pA/µm), indicating suitability for low-power digital applications.
  • A low gate work function difference (ΔϕS-D = 0.61 eV) resulted in high transconductance (gm) and cut-off frequency (fT), making the device suitable for low-power analog applications.

Conclusions:

  • The InGaAs p-TFET with DMG structure demonstrates tunable performance based on step gate work function.
  • The device is a promising candidate for future low-power digital applications with optimized high work function difference.
  • The device is also viable for future low-power analog applications with optimized low work function difference.