Updated: Oct 9, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Xueguang Lu1, Bowen Dong2, Hongfu Zhu1
1College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
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This study introduces a novel vanadium dioxide (VO2) meta-memory device enabling two-channel read/write operations. This innovation enhances storage capacity and speed for terahertz (THz) applications.
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