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Wafer-Scale Synthesis of WS2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition.

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Wafer-scale p-type tungsten disulfide (WS₂) films were synthesized using niobium (Nb) doping via atomic layer deposition (ALD). This breakthrough enables complementary WS₂ field-effect transistors (FETs) for advanced electronics.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Wafer-scale synthesis of p-type transition metal dichalcogenide (TMD) films is essential for commercializing next-generation optoelectronics.
  • Achieving controlled p-type doping in TMDs like tungsten disulfide (WS₂) remains a significant challenge.

Purpose of the Study:

  • To develop a wafer-scale synthesis method for intrinsic n-type and in situ Nb-doped p-type WS₂ films.
  • To fabricate and characterize WS₂-based field-effect transistors (FETs) with controllable doping for complementary circuits.

Main Methods:

  • Atomic Layer Deposition (ALD) for synthesizing WS₂ films on various substrates (Si, sapphire, GaN).
  • In situ Nb doping controlled by ALD precursor cycles, activated by post-annealing.
  • Fabrication of n-type and p-type WS₂ FETs using CMOS-compatible processes.
  • Characterization using X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements.

Main Results:

  • Successfully synthesized wafer-scale intrinsic n-type and in situ Nb-doped p-type WS₂ films.
  • Demonstrated effective substitutional Nb doping in WS₂.
  • Achieved high on/off ratios (10⁵ for n-FETs) and reasonable mobilities (6.85 cm²/Vs for n-FETs, 0.016 cm²/Vs for p-FETs).
  • Fabricated a functional p-n junction with a rectifying ratio of 10⁴.

Conclusions:

  • Controllable in situ Nb doping of WS₂ films is achievable via ALD.
  • This method provides a pathway for fabricating wafer-scale complementary WS₂ FETs.
  • The developed WS₂ films are promising for future integrated electronic and optoelectronic devices.