Ultrasensitive Photodetectors Based on Strongly Interacted Layered-Perovskite Nanowires

Metal-halide layered perovskites, self-assembled quantum wells with alternating insulating interlayer organic cations, and conductive perovskite layers boost the incorporation of multiple functionalities into a single-phase material. Optoelectronic performances in layered perovskites are more sensitive to crystallinity than their 3D counterparts due to the traps and insulating barriers introduced by interlayer cations. Here, we combine the capillary-bridge lithography method for the fabrication of single-crystalline nanowire arrays with strongly interacted layered perovskites for the enhancement of crystallinity and crystallographic orientation purity. Due to regulated nucleation and growth of layered perovskites in capillary bridges and the sulfur-sulfur interaction between interlayer cations, nanowires with pure (101) orientation are realized for underpinning insulating crystal interiors and photoconductive layer edges. Based on these nanowires, ultrasensitive photodetectors are reached with an ultralow dark current of below 10^-12 A, an average responsivity of 7.3 × 10³ A W^-1, an average specific detectivity of 3.9 × 10¹⁵ Jones, and a 3 dB bandwidth of 10.3 kHz.