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Related Experiment Video

Updated: Oct 8, 2025

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
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Investigating Selectorless Property within Niobium Devices for Storage Applications.

Po-Hsun Chen1,2, Chih-Yang Lin3, Ting-Chang Chang3,4

  • 1Department of Applied Science, R.O.C. Naval Academy, No. 669 Junxiao Road, Kaohsiung 81345, Taiwan.

ACS Applied Materials & Interfaces
|January 3, 2022
PubMed
Summary

Niobium oxide (NbO) devices show promise for neuromorphic computing by reducing leakage current. This study explains an abnormal reset phenomenon and achieves fast switching speeds for advanced memory applications.

Keywords:
1S1RRRAMniobiumselectorselectorless

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Resistive random-access memory (RRAM) is crucial for neuromorphic computing and high-density storage.
  • Leakage current from sneak paths hinders large-scale RRAM deployment.
  • Inherent selectors integrated into RRAM structures offer a solution to reduce sneak path currents without sacrificing density.

Purpose of the Study:

  • To investigate niobium oxide (NbO) as a material exhibiting both resistive switching and intrinsic selector behavior.
  • To analyze and explain the abnormal current behavior observed during the reset process in NbO devices.
  • To optimize NbO devices for high performance in memory and in-memory computing applications.

Main Methods:

  • Experimental fabrication and characterization of NbO-based resistive switching devices.
  • Statistical analysis of current conduction mechanisms.
  • Development of a physical model for conduction filaments to explain observed phenomena.

Main Results:

  • NbO exhibits co-existing non-volatile memory and metal-insulator-transition selector properties.
  • An abnormal reset phenomenon (current drop followed by a rise) was observed and explained via a conduction filament model.
  • Optimized devices achieved high non-linearity (∼500) and fast switching speeds (30 ns set, 50 ns reset).

Conclusions:

  • NbO devices possess intrinsic selector properties beneficial for mitigating sneak path currents in RRAM arrays.
  • The developed physical model successfully explains the anomalous reset behavior.
  • The demonstrated performance makes NbO a strong candidate for next-generation memory and in-memory computing technologies.