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Defect control and Si/Ge core-shell heterojunction formation on silicon nanowire surfaces formed using the top-down
Naoki Fukata1,2, Wipakorn Jevasuwan1, Yong-Lie Sun1,2
1International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan.
Nanotechnology
|January 5, 2022
Summary
This study demonstrates p-Si/i-Ge core-shell nanowires (NWs) for improved semiconductor devices. These NWs suppress impurity scattering, enabling enhanced device performance through controlled surface defects and doping.
Area of Science:
- Semiconductor Nanowire Technology
- Materials Science
- Device Physics
Background:
- Controlling surface defects and impurity doping is crucial for semiconductor nanowire (NW) device realization.
- Impurity scattering significantly degrades NW device performance.
- Existing top-down methods for NW fabrication allow position control but induce surface damage.
Purpose of the Study:
- To develop p-Si/i-Ge core-shell NWs with radial heterojunctions to suppress impurity scattering.
- To investigate methods for repairing surface damage and controlling NW surface roughness.
- To achieve hole gas accumulation in intrinsic germanium (i-Ge) layers for enhanced device characteristics.
Main Methods:
- Formation of p-Si/i-Ge core-shell NWs with radial heterojunctions.
- Utilizing oxidation and chemical etching to remove surface damaged layers on p-SiNWs.
- Employing controlled heat treatment with specific atmospheric gases to manage surface roughness.
- Characterizing NWs to confirm surface defect removal and impurity doping control.
Main Results:
- p-Si/i-Ge core-shell NWs were successfully fabricated, exhibiting radial heterojunctions.
- Oxidation and chemical etching effectively removed the surface damaged layer on p-SiNWs.
- Heat treatment conditions were optimized to control surface roughness based on atmospheric gas.
- Hole gas accumulation was observed in the i-Ge layers, crucial for suppressing impurity scattering.
Conclusions:
- p-Si/i-Ge core-shell NWs offer a promising structure for suppressing impurity scattering in semiconductor devices.
- Surface treatment methods, including oxidation and etching, are effective in repairing damage and reducing NW diameter.
- Controlled heat treatment is vital for managing surface roughness during NW fabrication.
- The observed hole gas accumulation in i-Ge layers confirms the potential of these NWs for advanced electronic applications.
