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Quantum Hall Effect across Graphene Grain Boundary.

Tuan Khanh Chau1, Dongseok Suh1, Haeyong Kang2

  • 1Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea.

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Summary
This summary is machine-generated.

Grain boundaries in chemical vapor deposition (CVD) graphene affect longitudinal resistance but not the quantum Hall effect (QHE) plateaus. This finding clarifies GB influence on graphene device performance.

Keywords:
CVD grapheneelectrical transportgrain boundaryquantum Hall effect

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Grain boundaries (GBs) in chemical vapor deposition (CVD) graphene impede charge carrier mobility, degrading device performance.
  • Scattering at GBs is anticipated to influence the quantum Hall effect (QHE) in graphene.

Purpose of the Study:

  • To investigate the impact of individual GBs on the quantum Hall (QH) state in monolayer CVD graphene.
  • To analyze how different GB stitching angles affect QH state properties.

Main Methods:

  • Fabrication of monolayer CVD graphene Hall bar devices with controlled GBs.
  • Measurement of longitudinal resistance (Rxx) and Hall resistance (Rxy) under QH conditions.
  • Utilizing a controlled device with an added metal bar to disrupt equipotential lines.

Main Results:

  • Longitudinal resistance (Rxx) was affected by GB scattering only at low carrier concentrations.
  • The standard QHE, characterized by quantized Hall resistance (Rxy) plateaus, was observed irrespective of GB stitching angle.
  • A controlled device demonstrated that Rxx was affected by non-zero resistance, while Rxy remained quantized despite broken equipotential lines.

Conclusions:

  • Individual GBs in CVD graphene primarily influence longitudinal resistance, not the fundamental quantized Hall resistance plateaus.
  • GBs do not disrupt the quantum Hall effect in monolayer graphene, regardless of their stitching angle.
  • This research clarifies the specific role of GBs in the behavior of graphene devices under QH conditions.