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Updated: Oct 6, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer
Mikhail Zhuravlev1,2, Artem Alexandrov2, Anatoly Vedyayev3
1St. Petersburg State University, St. Petersburg 190000, Russia.
Abstract:
Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin-orbit coupling linear in electron wave number. We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.
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