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Published on: August 15, 2018
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Ferromagnetic Double Perovskite Semiconductors with Tunable Properties
Lun Jin1, Danrui Ni1, Xin Gui1
1Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|January 20, 2022
Summary
Researchers induced ferromagnetism in a double perovskite semiconductor by doping with manganese. This creates a new material with a tunable bandgap for advanced spintronic devices.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Physics
Background:
- Double perovskite semiconductors are typically magnetically silent.
- Tuning the electronic and magnetic properties of semiconductors is crucial for spintronic applications.
Purpose of the Study:
- To investigate the possibility of inducing ferromagnetism in the Sr2GaSbO6 double perovskite.
- To tune the bandgap of the material through magnetic ion doping.
- To explore the potential of this material for next-generation spintronic devices.
Main Methods:
- Partial substitution of Ga3+ with Mn3+ in Sr2GaSbO6.
- Crystallization in tetragonal symmetry (space group I4/m).
- Characterization of magnetic and electronic properties.
Main Results:
- Successfully induced ferromagnetism in Sr2Ga1-xMnxSbO6.
- Achieved tunable ferromagnetic ordering temperature and bandgap.
- The material exhibits semiconducting properties.
Conclusions:
- Doping double perovskites with magnetic ions is a viable strategy to create functional spintronic materials.
- Sr2Ga1-xMnxSbO6 is a promising candidate for oxide-based spintronic devices.
- Further research into magnetic ion doping of double perovskites is warranted.
Keywords:
cation-ordered double perovskitesferromagnetic semiconductorsmagnetic-cation dopingtunable bandgaptunable ferromagnetic ordering temperatureMore Related Videos
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