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Updated: Oct 6, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
Eugeny Ryndin1, Natalia Andreeva1, Victor Luchinin1
1Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg Electrotechnical University "LETI", 5a Professor Popov St., Building 5, 197376 Saint Petersburg, Russia.
Abstract:
The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.
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