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Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Yingshuo Qin1, Changchun Chai1, Fuxing Li1

  • 1Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|January 21, 2022
PubMed

Keywords:
GaNHEMTdamage area predictionhigh-power microwaveself-heating effectthermal mechanism

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