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Electromagnetic Field Enhancement of Nanostructured TiN Electrodes Probed with Surface-Enhanced Raman Spectroscopy
Ibrahim Halil Öner1, Christin David2, Christine Joy Querebillo1
1Fakultät für Chemie und Lebensmittelchemie, Technische Universität Dresden, Andreas-Schubert-Bau, Zellescher Weg 19, 01069 Dresden, Germany.
We determined the electromagnetic field enhancement of nanostructured titanium nitride (TiN) electrodes using surface-enhanced Raman scattering (SERS). The TiN nanostructures showed significant enhancement, originating from localized plasmonic modes.
Area of Science:
- Materials Science
- Nanotechnology
- Spectroscopy
Background:
- Nanostructured titanium nitride (TiN) exhibits unique optical properties.
- Understanding electromagnetic field enhancement is crucial for applications in plasmonics and sensing.
- Titanium dioxide (TiO2) nanotube arrays can be converted to nanostructured TiN.
Purpose of the Study:
- To develop a facile approach for determining the electromagnetic field enhancement of nanostructured TiN electrodes.
- To investigate the origin of optical activity in TiN nanostructures.
- To correlate electromagnetic field enhancement with electronic absorption.
Main Methods:
- Fabrication of nanostructured TiN from nitridation of TiO2 nanotube arrays.
- Surface-enhanced Raman scattering (SERS) spectroscopy using azidobenzene as a non-surface binding reporter.
- Rigorous coupled wave analysis (RCWA) for simulating near-field enhancement and far-field absorption.
Main Results:
- Electromagnetic field enhancement factors (EFs) were determined across the optical region.
- EFs correlated with the electronic absorption profile, reaching 3.9 at 786 nm excitation.
- Simulations showed good agreement with experimental observations, attributing optical activity to collective localized plasmonic modes.
Conclusions:
- The study presents an effective method for quantifying electromagnetic field enhancement in nanostructured TiN.
- The observed optical activity in TiN nanostructures primarily arises from collective localized plasmonic modes around 700 nm.
- The findings provide insights into the plasmonic behavior of TiN for potential optoelectronic applications.
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