Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers

Xiaokang Yao1,2, Can Wang1,2,3, Er-Jia Guo1,2,3

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Summary

We discovered a ferroelectric proximity effect at interfaces between strontium ruthenium oxide (SrRuO3) and bismuth ferrite (BiFeO3) multilayers. This effect leads to unique magnetic states and a topological Hall effect, guiding spintronic device design.

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