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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Robust Dirac spin gapless semiconductors in a two-dimensional oxalate based organic honeycomb-kagome lattice
Jianpei Xing1, Xue Jiang1, Zhifeng Liu2
1Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China. jiangx@dlut.edu.cn.
Abstract:
Two-dimensional (2D) ferromagnetic materials with intrinsic and robust spin-polarized Dirac cones are of great interest in exploring exciting physics and in realizing spintronic devices. Using comprehensive ab initio calculations, herein we reveal a family of 2D oxalate-based metal-organic frameworks (MOFs) that possess the desired characteristics. We propose that these 2D oxalate-based MOFs may be assembled by oxalate ions (C2O42-) and two homo-transition metal atoms. We demonstrate that 2D MOFs of Ni2(C2O4)3 and Re2(C2O4)3 are intrinsic Dirac spin gapless semiconductors with linear band dispersion, low energy dissipation and high electron carrier velocity. As robust ferromagnets, they also possess large magnetic moments, large perpendicular magnetic anisotropy, and high Curie temperatures, e.g. 208 K for Ni2(C2O4)3. In particular, spin-orbit coupling triggers a topologically nontrivial band gap of 143 meV in Re2(C2O4)3, which is promising to realize the quantum anomalous Hall effect at high temperatures.

