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Related Experiment Video

Updated: Oct 5, 2025

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Ultra-clean high-mobility graphene on technologically relevant substrates.

Ayush Tyagi1,2, Vaidotas Mišeikis2,3, Leonardo Martini2

  • 1NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.

Nanoscale
|January 26, 2022
PubMed
Summary

A new cleaning method dramatically improves graphene's electrical properties, achieving high carrier mobility directly on silicon dioxide substrates. This breakthrough enables scalable, high-performance graphene for optoelectronics and photonics without encapsulation.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Chemical vapour deposition (CVD) grown graphene on copper foil is a scalable, high-quality material for optoelectronics and photonics.
  • High carrier mobility (approaching 10,000 cm² V⁻¹ s⁻¹) is crucial for reducing device losses and enabling compact designs, but typically requires graphene suspension or encapsulation.
  • Existing transfer and fabrication processes leave residues that degrade graphene's electrical properties.

Purpose of the Study:

  • To develop a rapid, facile, and scalable cleaning process for high-mobility graphene directly on silicon dioxide/silicon (SiO₂/Si) substrates.
  • To demonstrate the effectiveness of the cleaning process in removing residues and improving graphene's electrical characteristics.
  • To enable the direct integration of high-performance graphene in technologically relevant platforms.

Main Methods:

  • Utilized a novel cleaning process on graphene transferred to SiO₂/Si substrates.
  • Employed Atomic Force Microscopy (AFM) and spatially-resolved X-ray Photoelectron Spectroscopy (XPS) to analyze surface residues.
  • Conducted Raman spectroscopy to assess graphene doping and strain.
  • Performed transport measurements on 50 Hall bars (HBs) to determine carrier mobility.

Main Results:

  • The cleaning process effectively removed polymeric residues, significantly improving graphene quality.
  • Raman measurements indicated a substantial reduction in graphene doping and strain.
  • Achieved high hole mobility (μ<0xE2><0x82><0x95>) up to ~9000 cm² V⁻¹ s⁻¹ and electron mobility (μ<0xE2><0x82><0x91>) up to ~8000 cm² V⁻¹ s⁻¹.
  • Average mobilities were μ<0xE2><0x82><0x95> ~7500 cm² V⁻¹ s⁻¹ and μ<0xE2><0x82><0x91> ~6300 cm² V⁻¹ s⁻¹, nearly double that achieved with standard acetone cleaning.
  • High mobility was achieved over large scales and without encapsulation.

Conclusions:

  • The developed cleaning process provides ultraclean graphene with significantly enhanced carrier mobility directly on SiO₂/Si.
  • This method overcomes limitations of previous techniques, offering a scalable solution for integrating high-performance graphene.
  • The findings pave the way for the widespread adoption of graphene in optoelectronics and photonics applications.