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Recent Progress on Nanotechnologies for Solar Energy Conversion

Wenxiu Que1

  • 1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China.

Recent Patents on Nanotechnology
|January 28, 2022
PubMed
Summary

No abstract available in PubMed .

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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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