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Valleytronics in two-dimensional materials with line defect.

Hongyu Tian1, Chongdan Ren2, Sake Wang3,4

  • 1School of Physics and Electronic Engineering, Linyi University, Linyi 276005, People's Republic of China.

Nanotechnology
|February 2, 2022
PubMed
Summary
This summary is machine-generated.

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Valleytronics utilizes electron valley states for information processing. Polycrystalline 2D materials with grain boundaries enable unique valley transport, offering new avenues for electronic devices.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Valleytronics leverages the valley degree of freedom in electronic systems for novel functionalities.
  • Broken inversion symmetry is crucial for generating pure valley currents.
  • Polycrystalline 2D materials, such as graphene and transition metal dichalcogenides, naturally possess broken inversion symmetry due to grain boundaries.

Purpose of the Study:

  • To review the fundamental properties of valley degree of freedom across grain boundaries in polycrystalline 2D materials.
  • To explore manipulation strategies for valley polarization using electrical, magnetic, and mechanical methods.
  • To introduce numerical techniques for analyzing valley transport in these systems.

Main Methods:

  • Systematic demonstration of valley properties at grain boundaries.
Keywords:
grapheneline defectmirror symmetrynon-equilibrium Green’s functionquantum transporttwo-dimensional materialsvalleytronics

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  • Overview of electrical, magnetic, and mechanical manipulation techniques.
  • Introduction of the non-equilibrium Green's function technique for theoretical analysis.

    • Main Results:

    • Grain boundaries in polycrystalline 2D materials lead to mismatched Dirac valleys and unique valley transport phenomena.
    • Various methods can be employed to manipulate and control valley polarization.
    • The non-equilibrium Green's function technique is effective for studying valley transport.

    Conclusions:

    • Polycrystalline 2D materials are promising platforms for valleytronics due to their inherent broken inversion symmetry.
    • Understanding and controlling valley transport at grain boundaries is key to advancing valleytronic devices.
    • Further research on grain boundary effects in valleytronics is essential.