Thin films of the [Formula: see text]-quartz [Formula: see text] solid solution

[Formula: see text] with the [Formula: see text]-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. [Formula: see text] can also be crystallized into the [Formula: see text]-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than [Formula: see text]. Experiments on bulk crystals and theoretical studies have shown that these properties can be tuned by varying the Si/Ge ratio in the [Formula: see text] solid solution. However, to the best of our knowledge, thin films of [Formula: see text] quartz have never been reported. Here we present the successful crystallization of [Formula: see text] thin films in the [Formula: see text]-quartz phase on quartz substrates ([Formula: see text]) with x up to 0.75. Generally, the films grow semi-epitaxially, with the same orientation as the substrates. Interestingly, the [Formula: see text] composition grows fully strained by the quartz substrates and this leads to the formation of circular quartz domains with an ordered Dauphiné twin structure. These studies represent a first step towards the optimization of piezoelectric quartz thin films for high frequency (> 5 GHz) applications.