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Updated: Oct 3, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Observation of grain boundary plasmon and associated deconvolution techniques for low-loss electron energy-loss (EEL)

Proloy Nandi1, Eric R Hoglund1, James M Howe1

  • 1Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904, United States.

Ultramicroscopy
|February 14, 2022
PubMed

Keywords:
Begrenzungs (Bgs) peakBulk plasmonElectron energy-loss spectroscopy (EELS)Fourier-log deconvolutionFourier-ratio deconvolutionGrain boundary plasmon (GBP)

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