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Published on: April 12, 2018
Electronic cloaking of confined states in phosphorene junctions
S Molina-Valdovinos1, K J Lamas-Martínez1, J A Briones-Torres1
1Unidad Académica de Ciencia y Tecnología de la Luz y la Materia, Universidad Autónoma de Zacatecas, Carretera Zacatecas-Guadalajara Km. 6, Ejido La Escondida, 98160 Zacatecas, Zacatecas, México.
Abstract:
We study the electronic transport of armchair (AC) and zigzag (ZZ) gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of AC junctions confined states are reflected in the transmission properties as Fabry-Pérot resonances at normal and oblique incidence. In the case of ZZ junctions confined states are invisible at normal incidence, resulting in a null transmission. At oblique incidence Fabry-Pérot resonances are presented in the transmission as in the case of AC junctions. This invisibility or electronic cloaking is related to the highly direction-dependent pseudospin texture of the charge carriers in phosphorene. Electronic cloaking is also manifested as a series of singular peaks in the conductance and as inverted peaks in the Seebeck coefficient. The characteristics of electronic cloaking are also susceptible to the modulation of the phosphorene bandgap and an external magnetic field. So, electronic cloaking in phosphorene junctions in principle could be tested through transport, thermoelectric or magnetotransport measurements.
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