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The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal-Semiconductor Field-Effect

Han-Sol Ro1, Sung Ho Kang2, Sungyeop Jung1

  • 1Semiconductor Devices and Circuits Laboratory, Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea.

Materials (Basel, Switzerland)
|February 15, 2022
PubMed

Keywords:
device structuremetal–semiconductor field-effect transistorsnumerical simulationtechnology computer-aided designwork function

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