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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
Justinas Jorudas1, Paweł Prystawko2, Artūr Šimukovič1
1Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania.
Materials (Basel, Switzerland)
|February 15, 2022
Summary
A novel InAlGaN barrier layer was developed for high electron mobility transistors. This advancement is crucial for high-frequency microwave power and terahertz plasmonic devices.
Area of Science:
- Materials Science
- Semiconductor Physics
- Device Engineering
Background:
- High electron mobility transistors (HEMTs) are critical for high-frequency applications.
- Developing advanced barrier layers is essential for improving HEMT performance.
Purpose of the Study:
- To develop and characterize a quaternary lattice-matched InAlGaN barrier layer for HEMT structures.
- To investigate the potential of this layer for microwave power and terahertz plasmonic devices.
Main Methods:
- Metalorganic chemical-vapor deposition (MOCVD) was used to grow the InAlGaN layer.
- X-ray diffraction (XRD), photoluminescence (PL), and electrical measurements were employed for characterization.
Main Results:
- A 9 nm InAlGaN barrier layer with 16.5% indium content was successfully grown.
- Structural and optical properties were analyzed, showing a PL peak at 3.98 eV.
- A two-dimensional electron gas (2DEG) density of 1.2 × 10^13 cm^-2 and mobilities of 1590 cm^2/(V·s) at 300 K and 8830 cm^2/(V·s) at 77 K were confirmed.
Conclusions:
- The developed InAlGaN barrier layer exhibits promising properties for HEMT applications.
- The material is suitable for realizing advanced microwave power and terahertz plasmonic devices.
